? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 650 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 40 a, v ge = 15 v t j = 25 c 2.1 2.5 v note 1 t j = 125 c 1.8 v hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50a i f110 t c = 110 c48a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque, to-264 1.13/10 nm/lb.in. weight to-264 10 g plus247 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter tab = collector features ? very high frequency igbt and anti-parallel fred in one package ? square rbsoa ? high current handling capability ? mos gate turn-on for drive simplicity ? fast recovery epitaxial diode (fred) with soft recovery and low i rm applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed control ? dc servo and robot drives advantages ? space savings (two devices in one package) ? easy to mount with 1 screw g c e to-264 aa (ixgk) ds99148a(05/04) plus247 (ixgx) v ces = 600 v i c25 = 75 a v ce(sat) = 2.5 v t fi(typ) = 48 ns (tab) (tab) ixgk 50n60c2d1 ixgx 50n60c2d1 c2-class high speed igbts preliminary data sheet g e c
ixys reserves the right to change limits, test conditions, and dimensions. ixgk 50n60c2d1 ixgx 50n60c2d1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40 a; v ce = 10 v, 40 51 s note 1 c ies 3700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 290 pf c res 50 pf q g 138 nc q ge i c = 40 a, v ge = 15 v, v ce = 0.5 v ces 25 nc q gc 40 nc t d(on) 18 ns t ri 25 ns t d(off) 115 150 ns t fi 48 ns e off 0.38 0.7 mj t d(on) 18 ns t ri 25 ns e on 1.4 mj t d(off) 170 ns t fi 60 ns e off 0.74 mj r thjc 0.31 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 2.0 ? inductive load, t j = 125 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 2.0 ? plus247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60 a, v ge = 0 v, 2.1 v note 1 t j = 150 c 1.4 i rm i f = 60 a, v ge = 0 v, -di f /dt = 100 a/ t j = 100 c 8.3 a v r = 100 v t rr i f = 1 a; -di/dt = 200 a/ms; v r = 30 v 35 n s r thjc 0.65 k/w note 1: pulse test, t 300 s, duty cycle 2 % ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 280 320 012345678910 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 11v 6v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 6v 9v fig. 4. dependence of v ce(sat) on temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v c e ( s a t ) - normalized i c = 40a i c = 20a v ge = 15v i c = 80a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2.4 2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 80a 40a 20a fig. 6. input adm ittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g e - volts i c - amperes t j = 125oc 25oc ixgk 50n60c2d1 ixgx 50n60c2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgk 50n60c2d1 ixgx 50n60c2d1 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 2 4 6 8 10 12 14 16 18 r g - ohms e o f f - millijoules i c = 20a t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 9. dependence of turn-off en e r g y on i c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 20 30 40 50 60 70 80 i c - amperes e o f f - millijoules r g = 2 ? r g = 10 ? - - - - v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 80a r g = 2 ? r g = 10 ? - - - - v ge = 15v v ce = 480v i c = 40a i c = 20a fig. 11. dependence of turn-off sw itching time on r g 50 100 150 200 250 300 350 400 450 2 4 6 8 10 12 14 16 18 r g - ohms switching time - nanoseconds i c = 20a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 12. dependence of turn-off sw itching tim e on i c 40 60 80 100 120 140 160 180 200 20 30 40 50 60 70 80 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 2 ? v ge = 15v v ce = 480v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved fig. 15. gate charge 0 2 4 6 8 10 12 14 16 0 30 60 90 120 150 q g - nanocoulombs v g e - volts v ce = 300v i c = 40a i g = 10ma fig. 16. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - picofarrads c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 20 40 60 80 100 120 140 160 180 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 80a t d(off) t fi - - - - - - r g = 2 ? v ge = 15v v ce = 480v i c = 20a i c = 40a i c = 20a fig. 16. maxim um transient therm al resistance 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w fig. 14. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns ixgk 50n60c2d1 ixgx 50n60c2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgk 50n60c2d1 ixgx 50n60c2d1 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 60-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100c v r = 300v t vj = 100c i f = 60a fig. 19. peak reverse current i rm versus -di f /dt fig. 18. reverse recovery charge q r versus -di f /dt fig. 17. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 20. dynamic parameters q r , i rm versus t vj fig. 21. recovery time t rr versus -di f /dt fig. 22. peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 23. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.0385 t vj = 25c t vj =150c t vj =100c note: fig. 2 through fig. 6 show typical values
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